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Загальна кількість знайдених документів : 6
Представлено документи з 1 до 6
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Kosushkin V. G. Crystal Growth Mechanism in" Synthesis-solute-diffusion" Method in Ultrasonic Field [Електронний ресурс] / V. G. Kosushkin, S. L. Kozhitov, S. G. Emelyanov, Yu. N. Parkhomenko, L. V. Kozhitov // Журнал нано- та електронної фізики. - 2014. - Т. 6, № 3. - С. 03042-1-03042-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2014_6_3_44 Features crystal growth method "synthesis-solute-diffusion" when applied ultrasonic field are considered. Dependence of the crystal optical transmission heterogeneity frequency ultrasonic vibrations determined. System Tests showed that the optimal vibration frequency that provided a homogeneous crystals and permitting the maintenance of the solidification front in a predetermined position with an accuracy of <$Esymbol С~5~%> frequency is 4 MHz <$Esymbol С~5>. Comparison of the optimum frequency ultrasonic vibrations to increase uniformity in the mode of crystals convective transport under the Czochralski method and conditions of diffusive transfer method indicates a significant difference between these frequencies, i.e. character determines the transfer conditions of optimization process.
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Kosushkin V. G. Gallium Arsenide Czokhralski Crystal Growth with High Oscillatory Influences [Електронний ресурс] / V. G. Kosushkin, S. L. Kozhitov, S. G. Emelyanov, Yu. N. Parkhomenko, L. V. Kozhitov // Журнал нано- та електронної фізики. - 2014. - Т. 6, № 3. - С. 03043-1-03043-2. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2014_6_3_45 The influence of ultrasound introduced into the melt during the growth of single crystals of gallium arsenide. Ultrasonic vibrations had a frequency of 820 kHz and amplitude of 0,1 - 0,2 micrometer. Found an increase in the homogeneity of impurity distribution of the bands growth without change of the dislocation structure of single crystals. In the simulation result of the ultrasonic wave interaction with the melt in the crucible on the basis of the theory of formation of phases is established that nucleation rate associated with the frequency and amplitude of the ultrasonic vibration acting on the melt.
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Kosushkin V. G. Morphological Features of Gallium Arsenide Crystals Grown at Low-frequency Influences to the Crystallization Front [Електронний ресурс] / V. G. Kosushkin, S. L. Kozhitov, L. V. Kozhitov, Yu. N. Parkhomenko, L. M. Chervjakov // Журнал нано- та електронної фізики. - 2014. - Т. 6, № 3. - С. 03044-1-03044-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2014_6_3_46 It was found experimentally that on the initial part of crystal the fluctuations with amplitude more than 1 mm leads to break of the capillary column melt and close of growth. The physical significance of this functional relationship for this probably lies in the different orientation of surface tension forces. Regardless of the direction of stretching and an amplitude-frequency characteristics of development process of the power of the octahedral facets increased with increasing growth rate. Accidents on existing ideas are the result of periodic growth, due, for example, the rotation of the crystal in an asymmetric thermal field. When carrying out the method of crystal growth with perturbations at the interface it to a solid phase, the lateral surface is also composed of corrugations distinguishable to the naked eye.In general, the study of structural defects in the crystals obtained in exacting heat conditions, showed that in this case, lowfrequency disturbance of the melt at the interface reduces the average density of dislocations due to the periodic melting of crystallization and partially "heal" the defective portions of the crystals.
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Kosushkin V. G. "The Thermal Wave” in Technology of Crystal Growth from the Melt [Електронний ресурс] / V. G. Kosushkin, S. L. Kozhitov // Journal of Nano- and Electronic Physics. - 2013. - Vol. 5, № 4(1). - С. 04022-1-04022-2. - Режим доступу: http://nbuv.gov.ua/UJRN/jnep_2013_5_4(1)__24
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Holovaty Yu. P. Model of Band Diagram LED White Light in the System of GaN/InGaN [Електронний ресурс] / Yu. P. Holovaty, V. G. Kosushkin, N. A. Khahaev, D. A. Romanov, L. M. Chervyakov, E. K. Naimi, S. L. Kozhitov // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 4. - С. 04069-1-04069-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_4_71 The results of the research of semiconductor multilayer nanostructures suitable for making white light LEDs in the GaN/InGaN with red, green and blue emission spectra formed in a single chip. The methodology and the calculation of the energy levels, the wave functions of the carriers, the electric fields caused by the spontaneous polarization and the piezoelectric effect, the spontaneous emission spectrum and chromaticity coordinates of the total radiation.
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Kosushkin V. G. The Micro and Nano- Defects Formation during Czochralski Growth [Електронний ресурс] / V. G. Kosushkin, L. V. Kaplunov I. A. Kozhitov // Журнал нано- та електронної фізики. - 2016. - Т. 8, № 3. - С. 03054-1-03054-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2016_8_3_56
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